Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(<scp>i</scp>) thiocyanate and its polymer electrolyte-based memristive devices-Reference-Cited by-同舟云学术

Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(i) thiocyanate and its polymer electrolyte-based memristive devices

Published:2023 Issue:23 Volume:11 Page:7629-7640
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Deb Rajesh¹,Nair Manjula G.²,Das Ujjal³^ORCID,Mohapatra Saumya R.¹^ORCID

Affiliation:

1. Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India

2. Department of Physics, Indian Institute of Technology, Patna, Bihar, 801106, India

3. Quantum Materials and Device Unit, Institute of Nano Science and Technology, Mohali-140306, Punjab, India

Abstract

Analog and digital resistive switching characteristics of ITO/CuSCN/Cu and ITO/Cu-SPE/Cu memristive devices.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00090G

Reference61 articles.

1. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

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4. Halide Perovskites for Resistive Switching Memory

5. Analog‐Type Resistive Switching Devices for Neuromorphic Computing

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