Effect of deposition pressure on the structural and optical properties of Ga2O3films obtained by thermal post-crystallization
Author:
Affiliation:
1. School of Materials Science and Engineering
2. Harbin Institute of Technology
3. Harbin
4. People's Republic of China
Abstract
β-Ga2O3films have been obtained by thermal annealing of amorphous thin films that were deposited by radio frequency magnetron sputtering.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CE/C7CE01567D
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3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
4. Ga2O3 thin film for oxygen sensor at high temperature
5. Photocatalytic properties of gallium oxides prepared by precipitation methods toward the overall splitting of H2O
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