Growth of polycrystalline gallium oxide films in nitrogen–oxygen–nitrogen, argon, and oxygen ambient-Reference-Cited by-同舟云学术

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Growth of polycrystalline gallium oxide films in nitrogen–oxygen–nitrogen, argon, and oxygen ambient

Published:2023-12 Issue:36 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Hedei Puteri Haslinda Megat Abdul,Hassan Zainuriah,Quah Hock Jin^ORCID

Funder

Ministry of Higher Education Malaysia for Fundamental Research Grant Scheme

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-11709-8.pdf

Reference86 articles.

1. A. Rohatgi, P. Doshi, J. Moschner, T. Lauinger, A.G. Aberle, D.S. Ruby, Comprehensive study of rapid, low-cost silicon surface passivation technologies. IEEE Trans. Electron. Devices. 47, 987–993 (2000)

2. K.M. Abdul Shekkeer, J. Deng, K.Y. Cheong, K.M. Riyas, H.J. Quah, Alteration in growth temperatures of metal-organic decomposed Ga passivation layer in nitrogen/oxygen/nitrogen ambient. Ceram. Int. 49, 14760–14770 (2023)

3. Q. Hua, B. Ma, W. Hu, Aluminum, gallium, and indium nitrides, in Encyclopedia of Materials: Technical Ceramics and Glasses. ed. by M. Pomeroy (Elsevier, Oxford, 2021), pp.74–83

4. F. Ren, S.J. Pearton, Recent advances in wide bandgap semiconductor-based gas sensors, in Semiconductor Gas Sensors. ed. by R. Jaaniso, O.K. Tan (Woodhead Publishing, Cambridge, 2013), pp.159–219

5. J.B. Casady, R.W. Johnson, Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid State Electron. 39, 1409–1422 (1996)

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