Resistive switching in Ga- and Sb-doped ZnO single nanowire devices-Reference-Cited by-同舟云学术

Resistive switching in Ga- and Sb-doped ZnO single nanowire devices

Published:2015 Issue:45 Volume:3 Page:11881-11885
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Bo¹²³⁴⁵,Ren Tianshuang¹²³⁴⁵,Chen Si¹²³⁴⁵,Zhang Bosen¹²³⁴⁵,Zhang Rongfang¹²³⁴⁵,Qi Jing¹²³⁴⁵,Chu Sheng⁶⁷⁸⁹,Huang Jian¹⁰¹¹¹²¹³¹⁴,Liu Jianlin¹⁰¹¹¹²¹³¹⁴

Affiliation:

1. The Key Laboratory for Magnetism and Magnetic Materials of MOE

2. Department of Physics

3. School of Physical Science and Technology

4. Lanzhou University

5. Lanzhou

6. School of Physics and Engineering

7. Sun Yat-sen University

8. Guangzhou

9. China

10. Quantum Structures Laboratory

11. Department of Electrical and Computer Engineering

12. University of California

13. Riverside

14. USA

Abstract

Self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire device. The current is not only self-rectifying but also self-compliance for Sb-doped single nanowire devices in which multilevel resistive switching has also been achieved by using different SET voltages.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02102B

Reference40 articles.

1. Overview of candidate device technologies for storage-class memory

2. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

3. Control of thin ferroelectric polymer films for non-volatile memory applications

4. Nonvolatile Memory Elements Based on Organic Materials

5. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

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