Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing-Reference-Cited by-同舟云学术

Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing

Published:2021 Issue:47 Volume:9 Page:17019-17032
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tverjanovich Andrey¹^ORCID,Khomenko Maxim²,Benmore Chris J.³,Bereznev Sergei⁴,Sokolov Anton²⁵,Fontanari Daniele⁵,Kiselev Aleksei²,Lotin Andrey²,Bychkov Eugene²⁵^ORCID

Affiliation:

1. Institute of Chemistry, St. Petersburg State University, 198504 St. Petersburg, Russia

2. ILIT RAS – Branch of the FSRC ‘Crystallography and Photonics’ RAS, 140700 Shatura, Moscow Region, Russia

3. X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

4. Department of Materials and Environmental Technology, Tallinn University of Technology, 19086 Tallinn, Estonia

5. Laboratoire de Physico-Chimie de l’Atmosphère, Université du Littoral Côte d’Opale, 59140 Dunkerque, France

Abstract

Emerging brain-inspired computing needs phase-change materials of the next generation with lower energy consumption and wider temperature range. Gallium tellurides appear to be promising candidates enable to achieve the necessary requirements.

Funder

U.S. Department of Energy

Ministry of Science and Higher Education of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03850H

Reference90 articles.

1. Phase-change materials for rewriteable data storage

2. Phase Change Materials and Their Application to Nonvolatile Memories