In-gap state generated by La-on-Sr substitutional defects within the bulk of SrTiO3-Reference-Cited by-同舟云学术

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In-gap state generated by La-on-Sr substitutional defects within the bulk of SrTiO3

Published:2019 Issue:27 Volume:21 Page:14646-14653
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Aiura Yoshihiro¹²³⁴^ORCID,Ozawa Kenichi⁵⁶⁷⁴^ORCID,Tezuka Yasuhisa⁸⁹¹⁰⁴,Minohara Makoto¹²³⁴^ORCID,Samizo Akane¹²³⁴¹¹^ORCID,Bando Kyoko¹²²³⁴,Kumigashira Hiroshi¹³¹⁴¹⁵³⁴,Mase Kazuhiko¹³¹⁴¹⁵³⁴

Affiliation:

1. Electronics and Photonics Research Institute

2. National Institute of Advanced Industrial Science and Technology (AIST)

3. Tsukuba

4. Japan

5. Department of Chemistry

6. Tokyo Institute of Technology

7. Meguro

8. Graduate School of Science and Technology

9. Hirosaki University

10. Hirosaki

11. Department of Materials Science and Technology

12. Nanomaterials Research Institute

13. Photon Factory

14. Institute of Materials Structure Science (IMSS)

15. High Energy Accelerator Research Organization (KEK)

Abstract

La-on-Sr substitution defects in SrTiO₃ generate electrons and simultaneously cause local distortion in the conduction pathway.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP02307K

Reference53 articles.

1. Bulk electronic structure of SrTiO3: Experiment and theory

2. Superconductivity in Single-CrystallineSr1-xLaxTiO3

3. Preparation of parallel capacitor of epitaxial SrTiO3 film with a single-crystal-like behavior

4. Capacitance thermometer made of oxygen isotope-exchanged strontium titanate perovskite

5. Effects of doping by aluminum or lanthanum on the electrical and electroluminescence properties of Ca0.6Sr0.4TiO3:Pr thin films

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1. In-gap states and local structures around substitutional defects in La- or Nb-doped n-type SrTiO3;Next Materials;2024-01

2. Control of Hole Density in Russellite Bi₂WO₆ via Intentional Chemical Doping;Inorganic Chemistry;2023-06-01

3. Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory;Journal of Synchrotron Radiation;2022-02-16

4. Characteristic Electronic Structure of SnO Film Showing High Hole Mobility;The Journal of Physical Chemistry Letters;2022-01-27

5. Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors;Nano Select;2021-11-10

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