Ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(111)-Reference-Cited by-同舟云学术

Ferroelectric Hf_0.5Zr_0.5O₂ films on SrTiO₃(111)

Published:2022 Issue:21 Volume:10 Page:8407-8413
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Song Tingfeng¹,Estandía Saúl¹,Dix Nico¹^ORCID,Gàzquez Jaume¹^ORCID,Gich Martí¹^ORCID,Fina Ignasi¹^ORCID,Sánchez Florencio¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain

Abstract

The orthorhombic phase of Hf0.5Zr0.5O2 is stabilized by tilted epitaxy on LSMO/SrTiO3(111). The films present crystal variants with the polarization vector at different tilting angles with respect to the normal.

Funder

Fundación BBVA

Ministerio de Ciencia e Innovación

Consejo Superior de Investigaciones Científicas

China Scholarship Council

Departament d'Innovació, Universitats i Empresa, Generalitat de Catalunya

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00996J

Reference30 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric HfO2-based synaptic devices: recent trends and prospects

3. A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective

4. Review and perspective on ferroelectric HfO2-based thin films for memory applications

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