Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction-Reference-Cited by-同舟云学术

Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

Published:2018 Issue:11 Volume:10 Page:5302-5308
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Xu Yingtian¹²³⁴,Li Ying⁵³⁴,Shi Linlin¹²³⁴,Li Danni¹²³⁴,Zhang He¹²³⁴,Jin Liang¹²³⁴,Xu Li¹²³⁴,Ma Xiaohui¹²³⁴,Zou Yonggang¹²³⁴^ORCID,Yin Jingzhi⁶⁷⁸³⁴

Affiliation:

1. State Key Laboratory of High Power Semiconductor Laser

2. Changchun University of Science and Technology

3. Changchun

4. People's Republic of China

5. Changchun Automobile Industry institute

6. State Key Laboratory on Integrated Optoelectronics

7. College of Electronic Science and Engineering

8. Jilin University

Abstract

Electrically pumped whispering gallery mode (WGM) lasing was observed from ZnO single microwire (SMW)/p-Si heterojunctions operated under reverse bias.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR06872G

Reference38 articles.

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4. Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires

5. Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes

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