A single InGaN/GaN multiple quantum wells microwire light-emitting diode with high efficiency current injection and spreading

Author:

Song WeidongORCID,Chen Hang,Luo Xingjun,Sun Yiming,Wang Xingfu,Wang Hu,Guo Dexiao,Qi Mingyue,Li Guang,Li ShutiORCID

Funder

National Natural Science Foundation of China

Science and Technology Program of Guangdong Province, China

Science and Technology Project of Guangzhou City

Scientific Research Foundation of Graduate School of South China Normal University

Featured Innovation Projects of Colleges and Universities in Guangdong Province

Program for Changjiang Scholars and Innovative Research Team in Universities of China

Guangdong Provincial Department of Education project funding

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference39 articles.

1. Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors;Tchernycheva;Nano Lett.,2014

2. Monolithic photonic integrated circuit with a GaN-based bent waveguide;Cai;J. Micromech. Microeng.,2018

3. Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides;Li;IEEE J. Sel. Top. Quantum Electron.,2018

4. Toward electrically driven semiconductor nanowire lasers;Zhang;Nanotechnology,2019

5. High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes;Li;Mater. Lett.,2019

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