Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers-Reference-Cited by-同舟云学术

Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Published:2018 Issue:42 Volume:6 Page:11348-11355
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xiang Jing¹²³⁴⁵,Li Xiangling⁶⁷⁸⁵,Ma Yun⁶⁷⁸⁵^ORCID,Zhao Qiang⁶⁷⁸⁵^ORCID,Ho Cheuk-Lam¹²³⁴⁵,Wong Wai-Yeung¹²³⁴⁵^ORCID

Affiliation:

1. Institute of Molecular Functional Materials

2. Department of Chemistry and Institute of Advanced Materials

3. Hong Kong Baptist University

4. Kowloon Tong

5. P. R. China

6. Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM)

7. Nanjing University of Posts & Telecommunications (NUPT)

8. Nanjing 210023

Abstract

Non-conjugated ferrocene-containing copolymers FcCP1−FcCP3 with a triphenylamine, benzothiazole or phenothiazine pendant group exhibit flash memory behaviour with a bistable conductive process. Among them, FcCP1 showed a large ON/OFF current ratio of 10³ to 10⁴ and a low threshold voltage of −0.6 V.

Funder

National Natural Science Foundation of China

Hong Kong Polytechnic University

Research Grants Council, University Grants Committee

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC03140A

Reference68 articles.

1. Polymer-Based Resistive Memory Materials and Devices