Design Criteria for Ultrathin Single-Layer Flash Memristors from an Organic Polyradical-Reference-Cited by-同舟云学术

Design Criteria for Ultrathin Single-Layer Flash Memristors from an Organic Polyradical

Published:2016-10-10 Issue:11 Volume:2 Page:1600253
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ezugwu Sabastine¹,Paquette Joseph A.²,Yadav Vishal¹,Gilroy Joe B.²³,Fanchini Giovanni¹²³

Affiliation:

1. Department of Physics and Astronomy; The University of Western Ontario; 1151 Richmond Street London Ontario N6A 3K7 Canada

2. Department of Chemistry; The University of Western Ontario; 1151 Richmond Street London Ontario N6A 5B7 Canada

3. Centre for Advanced Materials and Biomaterials Research (CAMBR); The University of Western Ontario; 1151 Richmond Street London Ontario N6A 5B7 Canada

Funder

Western University

Natural Sciences and Engineering Research Council of Canada

Ministry of Research and Innovation

Canadian Foundation for Innovation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201600253/fullpdf

Reference43 articles.

1. Nonvolatile Memory Elements Based on Organic Materials

2. A Future Way of Storing Information: Resistive Random Access Memory.

3. Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

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