Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities
Author:
Affiliation:
1. Information Control Device Research Section
2. Electronics and Telecommunications Research Institute (ETRI)
3. Daejeon
4. Korea
5. Dept. of Energy Engineering
6. Hanyang University
7. Seoul
Abstract
The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03977D
Reference29 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel
3. High Performance Amorphous Multilayered ZnO-SnO<sub>2</sub> Heterostructure Thin-Film Transistors: Fabrication and Characteristics
4. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates
5. Direct Light Pattern Integration of Low-Temperature Solution-Processed All-Oxide Flexible Electronics
Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance improvement of multilayered ZnO/SnO2 thin-film transistors by varying supercycles and growth temperatures;Solid-State Electronics;2024-06
2. Intense pulsed light annealing of solution-based indium–gallium–zinc–oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors;Scientific Reports;2024-01-18
3. Recent advances in flexible solution-processed thin-film transistors for wearable electronics;Materials Science in Semiconductor Processing;2023-10
4. All-printed thin film transistor with a solution-based Indium- Gallium-Zinc-Oxide semiconductor and printed Ag electrodes via intense pulsed light annealing;2023-06-05
5. Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction;IEEE Transactions on Electron Devices;2023-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3