High Performance Amorphous Multilayered ZnO-SnO<sub>2</sub> Heterostructure Thin-Film Transistors: Fabrication and Characteristics-Reference-Cited by-同舟云学术

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High Performance Amorphous Multilayered ZnO-SnO<sub>2</sub> Heterostructure Thin-Film Transistors: Fabrication and Characteristics

Published:2015-12-01 Issue:6 Volume:37 Page:1135-1142
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Lee Su-Jae,Hwang Chi-Sun,Pi Jae-Eun,Yang Jong-Heon,Byun Chun-Won,Chu Hye Yong,Cho Kyoung-Ik,Cho Sung Haeng

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

3. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

4. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

5. Present status of amorphous In–Ga–Zn–O thin-film transistors

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1. Synthesis, characterization and estimation of performance parameters of binary ZnO–SnO2/p-Si heterojunction solar cells;Optical Materials;2024-08

2. Performance improvement of multilayered ZnO/SnO2 thin-film transistors by varying supercycles and growth temperatures;Solid-State Electronics;2024-06

3. Electrical and Optical Properties of Thin-Film Bismuth Ferrite;Technical Physics;2024-01

4. Polarization detection of ultraviolet light using ZnO microwires;Journal of Nanophotonics;2023-12-22

5. Outstanding High Field‐Effect Mobility of 299 cm² V⁻¹ s⁻¹ by Nitrogen‐Doped SnO₂ Nanosheet Thin‐Film Transistor;Advanced Materials Technologies;2023-01-29

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