Silicon nanowires prepared by metal induced etching (MIE): good field emitters-Reference-Cited by-同舟云学术

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Silicon nanowires prepared by metal induced etching (MIE): good field emitters

Published:2014 Issue:101 Volume:4 Page:57799-57803
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Kumar Vivek¹²³⁴,Saxena Shailendra K.⁵⁶⁷⁸⁹,Kaushik Vishakha¹⁰¹¹¹²,Saxena Kapil¹⁰¹¹¹²,Shukla A. K.¹⁰¹¹¹²,Kumar Rajesh⁵⁶⁷⁸⁹

Affiliation:

1. Biophysics & Nanoscience Centre

2. DEB-CNISM

3. Universita della Tuscia

4. I-01100 Viterbo, Italy

5. Material Research Laboratory

6. Discipline of Physics

7. Material Science & Engineering Group

8. Indian Institute of Technology Indore

9. , India

10. Department of Physics

11. Indian Institute of Technology Delhi

12. New Delhi 110016, India

Abstract

Efficient field emission from silicon nanowires prepared using metal induced etching.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA11093E

Reference38 articles.

1. Silicon Vertically Integrated Nanowire Field Effect Transistors

2. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

3. Silicon nanowire array photoelectrochemical solar cells

4. High Density n-Si/n-TiO2Core/Shell Nanowire Arrays with Enhanced Photoactivity

5. Silicon nanowires for rechargeable lithium-ion battery anodes

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3. Etching-Induced Longitudinal Phase Inhomogeneity in Fractal Silicon: Identification through Depth-Profiled Raman Mapping;The Journal of Physical Chemistry C;2023-06-21

4. Reframe of Fowler-Northeim Approach for Electron Field Emission of a Vertical Silicon Nanowires;Silicon;2023-06-03

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