The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires-Reference-Cited by-同舟云学术

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires

Published:2024 Issue:25 Volume:26 Page:17609-17621
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Kumar Chandra¹²,Kashyap Vikas³,Escrig Juan¹²,Shrivastav Monika⁴,Kumar Vivek⁵^ORCID,Guzman Fernando⁶,Saxena Kapil⁷^ORCID

Affiliation:

1. Departamento de Física, Universidad de Santiago de Chile (USACH), Avda. Víctor Jara 3493, 9170124 Santiago, Chile

2. Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago, Chile

3. Department of Physics, Panjab University, Chandigarh, 160014, India

4. Department of Physics, Malaviya National Institute of Technology, Jaipur, India

5. Department of Physics, Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, Chennai 600127, India

6. Departamento de Física, Facultad de Ciencias, Universidad Católica del Norte, Avenida Angamos 0610, Casilla 1280, Antofagasta, Chile

7. Department of Applied Sciences, Kamla Nehru Institute of Technology, Sultanpur, 228118, Uttar Pradesh, India

Abstract

This study investigates the electron field emission (EFE) of vertical silicon nanowires (Si NWs) fabricated on n-type Si (100) and p-type Si (100) substrates using catalyst-induced etching (CIE).

Funder

Centro para el Desarrollo de la Nanociencia y la Nanotecnología

Fondo Nacional de Desarrollo Científico y Tecnológico

Departamento de Investigaciones Científicas y Tecnológicas, Universidad de Santiago de Chile

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00825A

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