Variation of exchange energy in δ-(Ga,Mn)As films under tensile strain: PBE and LDA+U calculations-Reference-Cited by-同舟云学术

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Variation of exchange energy in δ-(Ga,Mn)As films under tensile strain: PBE and LDA+U calculations

Published:2015 Issue:108 Volume:5 Page:89139-89143
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Pan Y.¹²³⁴,Wei X. Y.⁵⁶⁷⁴,Ji F. M.⁸⁹¹⁰⁴,Zhu Y.¹²³⁴,Shi D. N.¹²³⁴,Yang Z. Q.⁵⁶⁷⁴

Affiliation:

1. College of Science

2. Nanjing University of Aeronautics and Astronautics

3. Nanjing 210016

4. China

5. State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) & Department of Physics

6. Fudan University

7. Shanghai 200433

8. School of Materials Science and Engineering

9. Ningbo University of Technology

10. Ningbo 315016

Abstract

PBE and LDA+U calculations were both used to clarify the variation of exchange energy in three kinds of δ-(Ga,Mn)As films under tensile strain.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA18564E

Reference34 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Experimental and computational analysis of transition metal ion-doped AlInN/GaN thin films

3. Enhancing Magnetic Ordering in Cr-Doped Bi2Se3 Using High-TC Ferrimagnetic Insulator

4. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

5. Robust half-metallicity in Ga1-xMnxP and Ga1-xMnxAs

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