Experimental and computational analysis of transition metal ion-doped AlInN/GaN thin films
Author:
Affiliation:
1. Department of Physics
2. University of Gujrat
3. Gujrat 50700
4. Pakistan
Abstract
Experimental and computational analysis of transition metal ion-doped AlInN/GaN thin films.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA12764E
Reference46 articles.
1. M. Goorsky , Ion Implantation, InTech publisher, Croatia, 2012
2. Nanocomposite Materials Formed by Ion Implantation
3. Effects of defects and doping on wide band gap ferromagnetic semiconductors
4. Ion implantation induced modification of structural and magnetic properties of perpendicular media
5. Geometrically Planar Ion-Implant Patterned Magnetic Recording Media Using Block Copolymer Aided Gold Nanoisland Masks
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