Laser induced ultrafast combustion synthesis of solution-based AlOx for thin film transistors-Reference-Cited by-同舟云学术

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Laser induced ultrafast combustion synthesis of solution-based AlOx for thin film transistors

Published:2020 Issue:18 Volume:8 Page:6176-6184
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Carlos Emanuel¹²³⁴⁵^ORCID,Dellis Spilios⁵⁶⁷⁸^ORCID,Kalfagiannis Nikolaos⁵⁶⁷⁸^ORCID,Koutsokeras Loukas⁹¹⁰¹¹¹²¹³^ORCID,Koutsogeorgis Demosthenes C.⁵⁶⁷⁸^ORCID,Branquinho Rita¹²³⁴^ORCID,Martins Rodrigo¹²³⁴^ORCID,Fortunato Elvira¹²³⁴^ORCID

Affiliation:

1. CENIMAT/i3N Departamento de Ciência dos Materiais

2. Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA

3. 2829-516 Caparica

4. Portugal

5. School of Science and Technology

6. Nottingham Trent University

7. Nottingham

8. UK

9. Cyprus University of Technology

10. Research Unit for Nanostructured Materials Systems

11. Kitiou Kyprianou 36

12. Lemesos

13. Cyprus

Abstract

Excimer laser annealing (ELA) combined with combustion synthesis leads to high quality metal oxide TFTs in a short processing time.

Funder

H2020 European Institute of Innovation and Technology

H2020 European Research Council

Fundação para a Ciência e a Tecnologia

European Regional Development Fund

Ministério da Ciência, Tecnologia e Ensino Superior

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01204A

Reference53 articles.

1. The 2016 oxide electronic materials and oxide interfaces roadmap

2. Sol-gel metal oxide dielectrics for all-solution-processed electronics

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Towards Oxide Electronics: a Roadmap

5. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

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1. Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing;Advanced Materials;2024-04-24

2. Solution‐Processed Metal Oxide Thin‐Film Transistor at Low Temperature via A Combination Strategy of H₂O₂‐Inducement Technique and Infrared Irradiation Annealing;Small Methods;2024-03-04

3. Universal Way to Enhance Solution-Processed High-κ Oxide Dielectrics Performance by Sulfate Incorporation;ACS Applied Materials & Interfaces;2024-02-08

4. A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT;Journal of Materials Chemistry C;2024

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