Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism-Reference-Cited by-同舟云学术

Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Author:

S. Barbosa M.¹²³⁴⁵,M. B. Oliveira F.¹²³⁴⁶,Meng X.⁵⁷⁸⁹,Soavi F.¹⁰¹¹¹²¹³^ORCID,Santato C.⁵⁷⁸⁹^ORCID,O. Orlandi M.¹²³⁴^ORCID

Affiliation:

1. Departamento de Físico-Química

2. São Paulo State University (UNESP)

3. Rua Professor Degni

4. Brazil

5. Département de Génie Physique

6. Department of Chemistry

7. Polytechnique Montréal

8. Montréal

9. Canada

10. Dipartimento di Chimica “Giacomo Ciamician”

11. Università di Bologna

12. Bologna

13. Italy

Abstract

Electrolyte-gated transistors hold promise for applications in printable and flexible electronics.

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Natural Sciences and Engineering Research Council of Canada

China Scholarship Council

CMC Microsystems

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference48 articles.

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