Electrolyte-Gated WO3 Transistors: Electrochemistry, Structure, and Device Performance-Reference-Cited by-同舟云学术

Electrolyte-Gated WO3 Transistors: Electrochemistry, Structure, and Device Performance

Published:2015-09-04 Issue:37 Volume:119 Page:21732-21738
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Meng Xiang¹,Quenneville Francis¹,Venne Frédéric¹,Di Mauro Eduardo¹,Işık Dilek¹,Barbosa Martin¹²,Drolet Yves¹,Natile Marta M.³,Rochefort Dominic⁴,Soavi Francesca⁵,Santato Clara¹

Affiliation:

1. Département de Génie Physique, Polytechnique Montréal, C.P. 6079, Succ. Centre Ville, Montreal, H3C 3A7, Canada

2. Departamento de Físico-Química, Universidade Estadual Paulista, Rua Professor Degni, 55, Araraquara, 14800-060, Brazil

3. CNR-IENI, Dipartimento di Scienze Chimiche, Università di Padova, Via F. Marzolo 1, Padova, 35131, Italy

4. Département de Chimie, Université de Montréal, C.P. 6128, Succ. Centre Ville, Montreal, H3C 3J7, Canada

5. Dipartimento di Chimica “Giacomo Ciamician”, Università di Bologna, Via Selmi, 2, Bologna, 40126, Italy

Funder

CMC Microsystems

Fonds de Recherche du Québec - Nature et Technologies

China Scholarship Council

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b06777

Reference45 articles.

1. Electrolyte-Gated Transistors for Organic and Printed Electronics

2. New opportunities for organic electronics and bioelectronics: ions in action

3. Electric-double-layer field-effect transistors with ionic liquids

4. Ionic Liquids for Electrolyte-Gating of ZnO Field-Effect Transistors

5. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

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