Modification of the p-GaP(001) work function by surface dipole bonds formed in sulfide solution-Reference-Cited by-同舟云学术

Modification of the p-GaP(001) work function by surface dipole bonds formed in sulfide solution

Published:2019 Issue:24 Volume:7 Page:7327-7335
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lebedev Mikhail V.¹²³^ORCID,Dementev Peter A.¹²³,Lvova Tatiana V.¹²³,Berkovits Vladimir L.¹²³

Affiliation:

1. Ioffe Institute

2. St. Petersburg

3. Russia

Abstract

Sulfur treatment of p-GaP(001) surfaces increases the ionization energy and near-surface electric field due to a dipole layer consisting of gallium sulfates.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC00210C

Reference76 articles.

1. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

2. Green Electroluminescence from Gallium Phosphide Diodes near Room Temperature

3. Semiconductor near-ultraviolet photoelectronics

4. Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications

5. Neurite outgrowth and synaptophysin expression of postnatal CNS neurons on GaP nanowire arrays in long-term retinal cell culture

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