Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping-Reference-Cited by-同舟云学术

Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping

Published:2020 Issue:24 Volume:12 Page:13137-13144
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Ningning¹²³⁴,Chen Peizong¹²³⁴,Peng Kun¹²³⁴,Zhang Lijian¹²³⁴,Liu Tao¹²³⁴,Yan Jia¹²³⁴,Jiang Zuimin¹²³⁴,Zhong Zhenyang¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Surface Physics and Department of Physics

2. Fudan University

3. Shanghai 200438

4. People's Republic of China

Abstract

Ultra-heavy phosphorus doping substantially modulates the growth and properties of self-assembled Ge-rich QDs, particularly resulting in a type-I band alignment.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00411A

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