Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method-Reference-Cited by-同舟云学术

Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method

Published:2020 Issue:47 Volume:8 Page:17025-17033
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Heng¹²³⁴⁵,Wang Wei¹²³⁴,Yip SenPo¹²³⁴⁵,Li Dapan¹²³⁴,Li Fangzhou¹²³⁴,Lan Changyong⁶⁷⁸⁴^ORCID,Wang Fei¹²³⁴⁵,Liu Chuntai⁹¹⁰¹¹⁴,Ho Johnny C.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. City University of Hong Kong

3. Kowloon 999077

4. China

5. State Key Laboratory of Terahertz and Millimeter Waves

6. State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering

7. University of Electronic Science and Technology of China

8. Chengdu 610054

9. Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University)

10. Ministry of Education

11. Zhengzhou 450002

Abstract

Substantial performance enhancement of near-infrared photodetectors can be achieved by utilizing two-step chemical vapor deposition-grown InGaAs nanowires as device channels.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC04330C

Reference45 articles.

1. Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires

2. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

3. Photogating in Low Dimensional Photodetectors

4. ZnO Nanowire UV Photodetectors with High Internal Gain

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