Photogating in Low Dimensional Photodetectors-Reference-Cited by-同舟云学术

Photogating in Low Dimensional Photodetectors

Published:2017-10-04 Issue:12 Volume:4 Page:1700323
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Fang Hehai¹²,Hu Weida¹²^ORCID

Affiliation:

1. State Key Laboratory of Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; 500 Yutian Road Shanghai 200083 China

2. University of Chinese Academy of Sciences; 19 Yuquan Road Beijing 100049 China

Funder

Major State Basic Research Development Program

National Natural Science Foundation of China

Chinese Academy of Sciences

Royal Society

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Reference111 articles.

1. High gain-bandwidth-product silicon heterointerface photodetector

2. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

3. Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

4. Infrared detectors: an overview

5. 0.1 ev HgCdTe photodetectors

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