Phosphorus doped SnO2 thin films for transparent conducting oxide applications: synthesis, optoelectronic properties and computational models-Reference-Cited by-同舟云学术

Phosphorus doped SnO2 thin films for transparent conducting oxide applications: synthesis, optoelectronic properties and computational models

Published:2018 Issue:41 Volume:9 Page:7968-7980
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Powell Michael J.¹²³⁴^ORCID,Williamson Benjamin A. D.¹²³⁴⁵^ORCID,Baek Song-Yi¹²³⁴,Manzi Joe¹²³⁴,Potter Dominic B.¹²³⁴^ORCID,Scanlon David O.¹²³⁴⁵^ORCID,Carmalt Claire J.¹²³⁴^ORCID

Affiliation:

1. Department of Chemistry

2. University College London

3. London WC1H 0AJ

4. UK

5. Thomas Young Centre

Abstract

Phosphorus doped tin(iv) oxide (P:SnO₂) films, with resistivity values of 7.27 × 10⁻⁴ Ω cm and improved visible light transmission, have been synthesised by AACVD.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/SC/C8SC02152J

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5. Enhanced transparent-conducting fluorine-doped tin oxide films formed by Aerosol-Assisted Chemical Vapour Deposition

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