High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer
Author:
Affiliation:
1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials
2. Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices
3. Faculty of Physics and Electronic Science
4. Hubei University
5. Wuhan 430062
Abstract
A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W−1 at 300 nm.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry,Catalysis
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NJ/C7NJ01140G
Reference27 articles.
1. Electron beam induced current profiling of the p-ZnO:N/n-GaN heterojunction
2. Epitaxial ZnO Nanowire-on-Nanoplate Structures as Efficient and Transferable Field Emitters
3. Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction
4. Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
5. A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
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