A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique-Reference-Cited by-同舟云学术

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Published:2016-04-23 Issue:24 Volume:28 Page:4824-4831
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Jo Seo-Hyeon¹,Kang Dong-Ho¹,Shim Jaewoo¹,Jeon Jaeho²,Jeon Min Hwan²,Yoo Gwangwe¹,Kim Jinok¹,Lee Jaehyeong¹,Yeom Geun Young²,Lee Sungjoo²,Yu Hyun-Yong³,Choi Changhwan⁴,Park Jin-Hong¹

Affiliation:

1. School of Electronic and Electrical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

2. SKKU Advanced Institute of Nanotechnology (SAINT); Sungkyunkwan University; Suwon 440-746 South Korea

3. School of Electrical Engineering; Korea University; Seoul 136-701 South Korea

4. Division of Materials Science and Engineering; Hanyang University; Seoul 133-791 South Korea

Funder

Korean government (MSIP)

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference31 articles.

1. Single-layer MoS2 transistors

2. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

3. Tunable Charge-Trap Memory Based on Few-Layer MoS2

4. High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

5. Single-Layer MoS2 Phototransistors

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