Tunable Charge-Trap Memory Based on Few-Layer MoS2-Reference-Cited by-同舟云学术

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Tunable Charge-Trap Memory Based on Few-Layer MoS2

Published:2014-12-17 Issue:1 Volume:9 Page:612-619
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhang Enze¹,Wang Weiyi¹,Zhang Cheng¹,Jin Yibo¹,Zhu Guodong²,Sun Qingqing³,Zhang David Wei³,Zhou Peng³,Xiu Faxian¹

Affiliation:

1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China

2. Department of Materials Science, Fudan University, Shanghai 200433, China

3. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

CPC Central Committee

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn5059419

Reference56 articles.

1. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

2. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

3. Single-Layer MoS2 Phototransistors

4. Metal dichalcogenide nanosheets: preparation, properties and applications

5. Electrically Switchable Chiral Light-Emitting Transistor

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