Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications-Reference-Cited by-同舟云学术

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

Published:2014 Issue:36 Volume:4 Page:18493-18502
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Meena Jagan Singh¹²³⁴⁵,Chu Min-Ching¹²³⁴,Singh Ranjodh¹²³⁴,Wu Chung-Shu¹²³⁴,Chand Umesh⁵³⁴,You Hsin-Chiang⁵⁶⁷,Liu Po-Tsun¹²³⁴,Shieh Han-Ping D.¹²³⁴,Ko Fu-Hsiang¹²³⁴

Affiliation:

1. Department of Materials Science and Engineering

2. Department of Photonics and Display Institute

3. National Chiao Tung University

4. Hsinchu 30010, Taiwan

5. Department of Electronics Engineering

6. National Chin-Yi University of Technology

7. Taichung 41170, Taiwan

Abstract

Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA01517G

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