Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (<150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application-Reference-Cited by-同舟云学术

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Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (<150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

Published:2006-02-17 Issue:No. 8 Volume:45 Page:L227-L229
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Sung-Hyun,Hong Wan-Shick,Kim Jong-Man,Lim Hyuck,Park Kuyng-Bae,Cho Chul-Lae,Lee Kyung-Eun,Kim Do-Young,Jung Ji-Sim,Kwon Jang-Yeon,Noguchi Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications;RSC Adv.;2014

2. Polysilicon thin-film transistors on polymer substrates;Materials Science in Semiconductor Processing;2012-12

3. Report from the third workshop on future directions of solid-state chemistry: The status of solid-state chemistry and its impact in the physical sciences;Progress in Solid State Chemistry;2008-01

4. Gate Insulator Inhomogeneity in Thin Film Transistors Having a Polycrystalline Silicon Layer Prepared Directly by Catalytic Chemical Vapor Deposition at a Low Temperature;Japanese Journal of Applied Physics;2007-12-14

5. Flexible Inorganic/Organic Hybrid Thin-Film Transistors Using All-Transparent Component Materials;Advanced Materials;2007-09-25

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