Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2 thin films scaled down to 3 nm-Reference-Cited by-同舟云学术

Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2 thin films scaled down to 3 nm

Published:2021 Issue:37 Volume:9 Page:12759-12767
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Chin-I¹^ORCID,Chen Hsin-Yang¹,Wang Chun-Yuan¹,Chang Teng-Jan¹,Jiang Yu-Sen¹,Chang Chih-Sheng²,Chen Miin-Jang¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

2. Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan, Republic of China

Abstract

Thickness dependent ferroelectric characteristics of HZO are systematically demonstrated down to 3 nm, exhibiting low operation voltage and high endurance.

Funder

Taiwan Semiconductor Manufacturing Company

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01778K

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3. Applications of Modern Ferroelectrics

4. S. J.Kim , et al., Ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications , in IEEE International Memory Workshop (IMW) , IEEE , 2018 , 1–4

5. R.Ramesh , Thin film ferroelectric materials and devices , Springer Science & Business Media , 2013

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