Piezoresistive effect of p-type single crystalline 3C–SiC on (111) plane-Reference-Cited by-同舟云学术

Piezoresistive effect of p-type single crystalline 3C–SiC on (111) plane

Published:2016 Issue:26 Volume:6 Page:21302-21307
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Dao Dzung Viet¹²³⁴²,Phan Hoang-Phuong¹²³,Qamar Afzaal¹²³,Dinh Toan¹²³

Affiliation:

1. Queensland Micro- and Nanotechnology Centre

2. Griffith University

3. Australia

4. School of Engineering

Abstract

This paper presents for the first time the effect of strain on the electrical conductivity of p-type single crystalline 3C–SiC grown on a Si (111) substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA28164D

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2. Review: Semiconductor Piezoresistance for Microsystems

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