Effect of the Surface Activation Parameter on the Fabrication Process of 4H–SiC Film on SiO <sub>2</sub> /Si Using the Crystal‐Ion‐Slicing Technique-Reference-Cited by-同舟云学术

Effect of the Surface Activation Parameter on the Fabrication Process of 4H–SiC Film on SiO ₂ /Si Using the Crystal‐Ion‐Slicing Technique

Published:2022-12-16 Issue:3 Volume:220 Page:2200028
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Zhu Dailei¹,Luo Wenbo¹²^ORCID,Wang Kaibiao¹,Xu Jintao¹,Huang Shitian¹,Shuai Yao¹²,Wu Chuangui¹²,Zhang Wanli¹²

Affiliation:

1. School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 P. R. China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Sichuan Province Science and Technology Support Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200028

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