Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure-Reference-Cited by-同舟云学术

Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

Published:2016 Issue:1 Volume:18 Page:197-204
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Heo Yooun¹²³⁴,Kan Daisuke⁵⁶⁷⁸,Shimakawa Yuichi⁵⁶⁷⁸⁹,Seidel Jan¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. University of New South Wales

3. Sydney

4. Australia

5. Institute for Chemical Research

6. Kyoto University

7. Uji

8. Japan

9. Japan Science and Technology Agency

Abstract

Bias- and time-dependent resistive switching measurements of BaTiO_3−δ, i.e. oxygen-deficient barium titanate (BaTiO₃) thin films, reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films.

Funder

National Research Foundation of Korea

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency

Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP05333A

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