Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities-Reference-Cited by-同舟云学术

Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr _0.2 Ti _0.8 O ₃ Films Assisted by Nanocavities

Published:2022-04-28 Issue:9 Volume:8 Page:2200077
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Gonzalez Casal Sergio¹,Bai Xiaofei¹,Alhada‐Lahbabi Kevin¹,Canut Bruno¹,Vilquin Bertrand²,Rojo Romeo Pedro²,Brottet Solène¹,Albertini David¹,Deleruyelle Damien¹,Bugnet Matthieu³,Canero Infante Ingrid¹,Gautier Brice¹^ORCID

Affiliation:

1. Univ Lyon, INSA Lyon, CNRS, Ecole Centrale de Lyon Université Claude Bernard Lyon 1, CPE Lyon, INL UMR5270 69621 Villeurbanne France

2. Univ Lyon, INSA Lyon, CNRS, Ecole Centrale de Lyon Université Claude Bernard Lyon 1, CPE Lyon, INL UMR5270 69130 Ecully France

3. Univ Lyon CNRS INSA Lyon, UCBL, MATEIS UMR 5510 69621 Villeurbanne France

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200077

Reference31 articles.

1. Ferroelectric Memories

2. Conformational Domain Wall Switch

3. Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

4. Mechanical Writing of Ferroelectric Polarization

5. Mechanically induced ferroelectric switching in BaTiO3 thin films

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