Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory-Reference-Cited by-同舟云学术

Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory

Published:2019 Issue:41 Volume:11 Page:19477-19487
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Park Min Hyuk¹²³⁴,Lee Young Hwan⁵⁶⁷⁸⁴,Hwang Cheol Seong⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Pusan National University

3. Busan 46241

4. Republic of Korea

5. Department of Materials Science and Engineering & Inter-University Research Center

6. College of Engineering

7. Seoul National University

8. Seoul 08826

Abstract

The nucleation theory is revisited to understand the unexpected ferroelectric phase formation in HfO₂-based thin films. Considering the two-step phase transition from amorphous doped HfO₂, the ferroelectric phase formation can be understood.

Funder

Ministry of Science, ICT and Future Planning

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05768D

Reference43 articles.

1. Ferroelectricity in undoped hafnium oxide

2. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

3. Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

4. Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

5. Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles predictions of HfO2-based ferroelectric superlattices;npj Computational Materials;2024-07-16

2. Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation;Materials Science and Engineering: R: Reports;2024-06

3. Universal insights into the origin of ferroelectricity in doped hafnia;2024-04-18

4. Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf_0.5Zr_0.5O₂ by Optimizing TiN_x Interfacial Capping Layer and Its Fatigue Mechanism;IEEE Electron Device Letters;2024-04

5. Kinetical phase transition paths and phase stability in ferroelectric HfO2;Scripta Materialia;2024-03