Pulsed-flow growth of polar, semipolar and nonpolar AlGaN-Reference-Cited by-同舟云学术

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

Published:2020 Issue:25 Volume:8 Page:8668-8675
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Dinh Duc V.¹²³⁴^ORCID,Hu Nan⁵²⁶⁴,Honda Yoshio¹²³⁴,Amano Hiroshi¹²³⁴⁷,Pristovsek Markus¹²³⁴

Affiliation:

1. Institute of Materials and Systems for Sustainability

2. Nagoya University

3. Nagoya 464-8601

4. Japan

5. School of Engineering

6. Nagoya 464-8603

7. Akasaki Research Center

Abstract

The impacts of pulsed-flow growth on aluminium incorporation in polar (0001), semipolar (101̄3) and (112̄2), as well as nonpolar (101̄0) AlGaN layers have been investigated.

Funder

Strategic International Collaborative Research Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01369B

Reference50 articles.

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3. High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

4. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

5. GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

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