Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN-Reference-Cited by-同舟云学术

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Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Published:2024 Issue: Volume: Page:
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Bhattarai Bipin¹^ORCID,Zhang Xiaoman²,Xu Wangwang²,Gu Yijia³^ORCID,Meng W. J.²^ORCID,Meng Andrew C.¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USA

2. Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803, USA

3. Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409, USA

Abstract

Effect of Sc spatial distribution on the ferroelectric properties of AlScN.

Funder

Office of Integrative Activities

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D4MH00551A

Reference37 articles.

1. AlScN: A III-V semiconductor based ferroelectric

2. Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

3. Local chemical origin of ferroelectric behavior in wurtzite nitrides

4. Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution

5. Nanoscale compositional segregation in epitaxial AlScN on Si (111)

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