The double layer capacitance of ionic liquids for electrolyte gating of ZnO thin film transistors and effect of gate electrodes-Reference-Cited by-同舟云学术

The double layer capacitance of ionic liquids for electrolyte gating of ZnO thin film transistors and effect of gate electrodes

Published:2017 Issue:14 Volume:5 Page:3509-3518
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Singh M.¹²³⁴,Manoli K.¹²³⁴,Tiwari A.¹²³⁴,Ligonzo T.⁵⁶³⁴,Di Franco C.⁷⁸³⁴,Cioffi N.¹²³⁴⁹,Palazzo G.¹²³⁴⁹^ORCID,Scamarcio G.⁵⁶³⁴⁷,Torsi L.¹²³⁴⁹

Affiliation:

1. Dipartimento di Chimica

2. Università degli Studi di Bari “A. Moro”

3. 70126 Bari

4. Italy

5. Dipartimento Interateneo di Fisica

6. Università di Bari “A. Moro”

7. CNR-IFN

8. Dipartimento Interateneo di Fisica Università di Bari “A. Moro”

9. CSGI

Abstract

Electrolyte gated thin film transistors (TFTs) based on sol–gel processed zinc oxide (ZnO) are investigated using imidazolium-based ionic liquids (ILs), namely [bmim][BF₄] and [bmim][PF₆], as electrolytes.

Funder

Seventh Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00800G

Reference48 articles.

1. Thin-Film Transistors

2. High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Review of solution-processed oxide thin-film transistors

5. Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

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