In Situ Measurement of Effective Gate Bias Voltage in Ionic Liquid-Gated Organic Field-Effect Transistors: Exploring Intrinsic Performance and Trap Density of States-Reference-Cited by-同舟云学术

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In Situ Measurement of Effective Gate Bias Voltage in Ionic Liquid-Gated Organic Field-Effect Transistors: Exploring Intrinsic Performance and Trap Density of States

Published:2023-10-09 Issue:41 Volume:15 Page:48431-48441
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yadav Yogesh¹^ORCID,Singh Samarendra P.¹^ORCID

Affiliation:

1. Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar, Uttar Pradesh, India 201314

Funder

Council of Scientific and Industrial Research, India

Indian Council of Agricultural Research

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c07898

Reference38 articles.

1. Prediction of Flatband Potentials at Semiconductor‐Electrolyte Interfaces from Atomic Electronegativities

2. Interpretation and use of Mott–Schottky plots at the semiconductor/electrolyte interface

3. The structure of the semiconductor-electrolyte interface

4. Physical properties of the semiconductor-electrolyte interface

5. Electroreflectance at a Semiconductor-Electrolyte Interface

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1. Charge carrier trapping in organic semiconductors: Origins, impact and strategies for mitigation;Synthetic Metals;2024-09

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