Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4769091
Reference19 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Review paper: Transparent amorphous oxide semiconductor thin film transistor
3. Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits
4. High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere
5. Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
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