Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors-Reference-Cited by-同舟云学术

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Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors

Published:2020 Issue:21 Volume:10 Page:12547-12553
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Xingchen¹²³⁴⁵^ORCID,Tang Ning¹²³⁴⁵,Fang Chi⁶⁷⁸⁹¹⁰,Wan Caihua⁶⁷⁸⁹¹⁰,Zhang Shixiong¹²³⁴⁵,Zhang Xiaoyue¹²³⁴⁵,Guan Hongming¹²³⁴⁵,Zhang Yunfan¹²³⁴⁵,Qian Xuan¹¹¹²⁹¹³⁵,Ji Yang¹¹¹²⁹¹³⁵,Ge Weikun¹²³⁴⁵,Han Xiufeng⁶⁷⁸⁹¹⁰,Shen Bo¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

2. School of Physics

3. Peking University

4. Beijing 100871

5. China

6. Beijing National Laboratory for Condensed Matter Physics

7. Institute of Physics

8. University of Chinese Academy of Sciences

9. Chinese Academy of Sciences

10. Beijing 100190

11. State Key Laboratory for Superlattices and Microstructures

12. Institute of Semiconductors

13. Beijing 100083

Abstract

The interface-related spin relaxation in n-GaN/MgO/Co was investigated by both electrical Hanle effect and time resolved Kerr rotation spectrum.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

K. C. Wong Education Foundation

Youth Innovation Promotion Association, CAS

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA00464B

Reference33 articles.

1. Room-Temperature Spin Polariton Diode Laser

2. Efficient Spin-Light Emitting Diodes Based on InGaN/GaN Quantum Disks at Room Temperature: A New Self-Polarized Paradigm

3. Electronic analog of the electro‐optic modulator

4. Control of Spin Precession in a Spin-Injected Field Effect Transistor

5. All-electric all-semiconductor spin field-effect transistors

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4. Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices;Advanced Electronic Materials;2023-05-09

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