Non-volatile resistive switching mechanism in single-layer MoS2 memristors: insights from ab initio modelling of Au and MoS2 interfaces-Reference-Cited by-同舟云学术

Non-volatile resistive switching mechanism in single-layer MoS₂ memristors: insights from ab initio modelling of Au and MoS₂ interfaces

Published:2023 Issue:16 Volume:5 Page:4203-4212
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Boschetto Gabriele¹^ORCID,Carapezzi Stefania¹^ORCID,Todri-Sanial Aida¹²

Affiliation:

1. Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS, 161 Rue Ada, 34095 Montpellier, France

2. Department of Electrical Engineering, Eindhoven University of Technology, Groene Loper 3, 5612 AE Eindhoven, Netherlands

Abstract

The migration of Au atoms to fill the S vacancies in MoS2 memristors increases the electron injection rate and reduces the contact resistance at the metal–semiconductor interface, thus causing the resistive switch.

Funder

Horizon 2020 Framework Programme

Grand Équipement National De Calcul Intensif

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D3NA00045A

Reference55 articles.

1. Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

2. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

3. Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

4. Advanced Data Encryption using 2D Materials

5. In-memory computing with resistive switching devices

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