In situ surface cleaning on a Ge substrate using TMA and MgCp2for HfO2-based gate oxides-Reference-Cited by-同舟云学术

In situ surface cleaning on a Ge substrate using TMA and MgCp2for HfO2-based gate oxides

Published:2015 Issue:19 Volume:3 Page:4852-4858
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Oh Il-Kwon¹²³⁴,Kim Kangsik⁵⁶⁷⁴,Lee Zonghoon⁵⁶⁷⁴^ORCID,Song Jeong-Gyu¹²³⁴,Lee Chang Wan¹²³⁴,Thompson David⁸⁹¹⁰,Lee Han-Bo-Ram¹¹¹²¹³⁴,Kim Woo-Hee¹⁴¹⁵¹⁶¹⁰^ORCID,Maeng Wan Joo¹¹¹⁷¹⁸¹⁰,Kim Hyungjun¹²³⁴

Affiliation:

1. School of Electrical and Electronics Engineering

2. Yonsei University

3. Seoul

4. Korea

5. School of Materials Science and Engineering

6. Ulsan National Institute of Science and Technology (UNIST)

7. Ulsan

8. Applied Materials

9. Sunnyvale

10. USA

11. Department of Materials Science and Engineering

12. Incheon National University

13. Incheon

14. Department of Chemical Engineering

15. Stanford University

16. Stanford

17. University of Wisconsin Madison

18. Madison

Abstract

Compared to TMA, MgCp₂is an effective remover of Ge oxides with a more stable interface quality resulting in better electrical properties of Ge-based MOS devices.

Funder

Ministry of Knowledge Economy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02686A

Reference31 articles.

1. Surface oxidation states of germanium

2. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

3. Direct Comparison of ZrO2and HfO2on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks

4. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

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