Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation-Reference-Cited by-同舟云学术

Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation

Published:2017 Issue:59 Volume:7 Page:37296-37301
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yang Xiaopeng¹²³⁴⁵^ORCID,Xu Xiang¹²³⁴⁵,Liu Feng¹²³⁴⁵,Zhang Liqiang⁶⁷⁸⁹⁵,Ji Ziwu¹⁰¹¹¹²⁵,Chen Qifeng¹²³⁴⁵,Cao Bingqiang¹²³⁴⁵

Affiliation:

1. Materials Research Center for Energy and Photoelectrochemical Conversion

2. School of Material Science and Engineering

3. University of Jinan

4. Jinan 250022

5. China

6. State Key Laboratory of Heavy Oil Processing

7. Department of Materials Science and Engineering

8. China University of Petroleum

9. Beijing 102249

10. School of Physics

11. Shandong University

12. Jinan 250100

Abstract

An ingenious method of preparation of ZnO homojunctions for on-chip integration purposes is proposed, by local multiple pulse laser irradiating (MPLI) ZnO:Na film (NZO).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA05574A

Reference28 articles.

1. Nonpolara-plane ZnO films grown on GaN/sapphire templates with SiNxinterlayer by pulsed laser deposition

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4. Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

5. A review of thermal processing in the subsecond range: semiconductors and beyond

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