Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2364834
Reference12 articles.
1. Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
2. Chapter 5 Nonequilibrium Solidification Following Pulsed Laser Melting
3. J. M. Poate and J. W. Mayer, Laser Annealing of Semiconductors (Academic, New York, 1982), pp. 111–146.
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