First principles study of Schottky barriers at Ga2O3(100)/metal interfaces-Reference-Cited by-同舟云学术

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First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

Published:2020 Issue:25 Volume:10 Page:14746-14752
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu Ran¹²³⁴⁵,Lin Na¹²³⁴⁶^ORCID,Jia Zhitai¹²³⁴^ORCID,Liu Yueyang⁵⁷⁸⁹⁴,Wang Haoyuan¹²³⁴,Yu Yifei¹²³⁴,Zhao Xian¹²³⁴

Affiliation:

1. State Key Lab of Crystal Materials

2. Shandong University

3. 250100 Jinan

4. P. R. China

5. State Key Laboratory of Superlattices and Microstructures

6. Department of Chemistry

7. Institute of Semiconductors

8. Chinese Academy of Sciences

9. 100083 Beijing

Abstract

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/C9RA09521G

Reference46 articles.

1. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

2. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

3. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

4. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

5. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

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2. Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3;Inorganics;2023-10-11

3. Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K);Materials Science in Semiconductor Processing;2023-10

4. Ohmic contacts in MXene/MoSi2N4 heterojunctions;Applied Physics Letters;2023-07-10

5. 4H-SiC Ohmic contacts formation by MoS₂ layer intercalation: A first-principles study;Journal of Applied Physics;2022-12-28

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