p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium-Reference-Cited by-同舟云学术

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p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium

Published:2018 Issue:9 Volume:10 Page:4361-4369
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sun Feipeng¹²³⁴⁵,Hao Zhuoran¹²³⁴⁵,Liu Guozhen¹²³⁴⁵,Wu Chenping¹²³⁴⁵,Lu Shiqiang¹²³⁴⁵,Huang Shengrong⁶⁷⁸,Liu Chuan⁹¹⁰⁴⁵⁸,Hong Qiming⁹¹⁰⁴⁵⁸,Chen Xiaohong¹²³⁴⁵,Cai Duanjun¹²³⁴⁵^ORCID,Kang Junyong¹²³⁴⁵

Affiliation:

1. Fujian Key Laboratory of Semiconductor Materials and Applications

2. CI Center for OSED

3. College of Physical Science and Technology

4. Xiamen University

5. Xiamen 361005

6. Xiamen Top-succeed Electronics Technology Co. Ltd

7. Xiamen 361022

8. China

9. State Key Laboratory of Physical Chemistry of Solid Surfaces

10. College of Chemistry and Chemical Engineering

Abstract

p-Type conductivity of hexagonal boron nitride has been achieved as a dielectrically tunable monolayer by modulation doping with Mg.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR08035B

Reference48 articles.

1. Effective Control of the Charge and Magnetic States of Transition-Metal Atoms on Single-Layer Boron Nitride

2. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

3. Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications

4. Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

5. Atomic layers of hybridized boron nitride and graphene domains

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