1. http://www.ioffe.ru/SVA/NSM/Semicond/.
2. Rumyantsev S. L. Levinshtein M. E. Jackson A. D. Mohammmad S. N. Harris G. L. Spencer M. G. Shur M. S. in Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, SiGe., Eds. Levinshtein M. E. Rumyantsev S. L. Shur M. S. , John Wiley & Sons, Inc., New York, 2001, p67.
3. Effect of High Pressure on the Lattice Parameters of Diamond, Graphite, and Hexagonal Boron Nitride
4. Pease R. S. , “An X-ray study of boron nitride,” 5, 356 (1952).
5. Numerica/Data and Functional/Relationship in Science and Technology —Crystal and Solid State Physics, edited by Madelung Q. , Landolt-Bornstein Vol. III, (Springer, Berlin, 1972).