ε-InSe single crystals grown by a horizontal gradient freeze method-Reference-Cited by-同舟云学术

ε-InSe single crystals grown by a horizontal gradient freeze method

Published:2020 Issue:45 Volume:22 Page:7864-7869
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Sun Maojun¹²³⁴⁵,Wang Wei¹²³⁴⁵,Zhao Qinghua¹²³⁴⁵,Gan Xuetao⁶²³⁴^ORCID,Sun Yuanhui⁷⁸⁹¹⁰,Jie Wanqi¹²³⁴⁵,Wang Tao¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Solidification Processing

2. Northwestern Polytechnical University

3. Xi'an

4. P. R. China

5. Key Laboratory of Radiation Detection Materials and Devices

6. School of Physical Science and Technology

7. Department of Chemistry and Biochemistry

8. California State University Northridge

9. Northridge

10. USA

Abstract

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Fundamental Research Funds for the Central Universities

State Key Laboratory of Solidification Processing

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE01271H

Reference46 articles.

1. InSe: a two-dimensional material with strong interlayer coupling

2. Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

3. InSe Schottky Diodes Based on Van Der Waals Contacts

4. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

5. Phase Identification and Strong Second Harmonic Generation in Pure ε-InSe and Its Alloys

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